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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Nonadiabatic charge pumping in a hybrid single-electron transistor
Dmitri V Averin1, Jukka P Pekola
1Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, New York 11794-3800, USA.
Physical Review Letters
|September 4, 2008
Summary
This study explores current quantization in superconductor-normal-metal single-electron transistors. By controlling specific quantum processes, metrological accuracy of 10⁻⁸ can be achieved with a 30 pA quantized current.
Area of Science:
- Quantum electronics
- Superconducting devices
- Single-electron transistors
Background:
- Current quantization in single-electron transistors is crucial for metrology.
- Existing limitations in accuracy stem from Andreev reflection and Cooper-pair-electron cotunneling.
- Superconductor-normal-metal interfaces present unique quantum phenomena.
Purpose of the Study:
- To theoretically investigate current quantization accuracy in a charge turnstile.
- To identify and quantify the dominant error sources limiting precision.
- To propose methods for enhancing metrological accuracy in superconducting devices.
Main Methods:
- Theoretical analysis of quantum transport phenomena.
- Calculation of process rates in the "above-the-threshold" regime.
- Modeling of superconductor-normal-metal single-electron transistor dynamics.
Main Results:
- Quantization accuracy is limited by Andreev reflection and Cooper-pair-electron cotunneling.
- Rates of these limiting processes were calculated under specific conditions.
- Achieving 10⁻⁸ metrological accuracy is theoretically possible.
Conclusions:
- Shaping the AC gate voltage drive can optimize current quantization.
- A single turnstile with realistic parameters can achieve high accuracy.
- Aluminum-based superconductors offer a viable platform for precise current standards.
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