Related Experiment Video
Updated: Jun 27, 2026
08:12
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Silicon nanocluster prepared using ion beam mixing technique
Trupti N Warang1, K U Joshi, D C Kothari
1Department of Physics, University of Mumbai, Vidyanagari, Santacruz East, Mumbai 400098, India.
Journal of Nanoscience and Nanotechnology
|December 4, 2008
Summary
This study demonstrates that ion beam parameters control silicon nanocluster size and band gap. Increasing ion beam fluence in fused silica shifts absorption edges to higher energies, reducing nanocluster size.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Silicon nanoclusters (Si-nc) are crucial for optoelectronic applications.
- Controlling Si-nc properties like band gap is essential for device performance.
- Ion beam techniques offer precise methods for nanomaterial synthesis and modification.
Purpose of the Study:
- To investigate the modification of the absorption band gap of silicon nanoclusters.
- To explore the effect of ion beam mixing parameters on Si-nc properties.
- To establish a correlation between ion beam fluence and Si-nc size and band gap.
Main Methods:
- Preparation of Si-nc in fused silica using ion beam mixing.
- Pre-irradiation of fused silica with Ar+ ions at varying fluences (5 x 10^16 to 4 x 10^17 cm^-2).
- Introduction of Si atoms via ion beam mixing with Ar+ ions (30 keV, 1 x 10^17 cm^-2).
- Analysis of optical properties using UV-Vis absorption spectroscopy to determine band gap.
Main Results:
- The absorption edge of Si-nc shifts towards higher energies with increased ion beam fluence.
- An increase in ion beam fluence leads to a decrease in the size of silicon nanoclusters.
- Band gap modification of Si-nc was achieved by controlling ion beam mixing parameters.
Conclusions:
- Ion beam irradiation parameters significantly influence the optical properties of Si-nc.
- The study provides a method for tuning the band gap of silicon nanoclusters for specific applications.
- Precise control over Si-nc size and band gap is achievable through optimized ion beam processing.
