Related Experiment Video
Updated: Jun 27, 2026
08:48
Writing Bragg Gratings in Multicore Fibers
Published on: April 20, 2016
Single GaAs/GaAsP coaxial core-shell nanowire lasers
Bin Hua1, Junichi Motohisa, Yasunori Kobayashi
1Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan. hua@rciqe.hokudai.ac.jp
Nano Letters
|December 17, 2008
Summary
Uniform gallium arsenide/gallium arsenide phosphide coaxial nanowires demonstrate near-infrared (NIR) lasing. This breakthrough utilizes natural nanowire facets as a cavity for stimulated emission, advancing nanowire-based NIR light sources.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Semiconductor nanowires offer unique properties for optoelectronic devices.
- Achieving controlled heterostructures in nanowires is crucial for advanced functionalities.
- Developing efficient near-infrared (NIR) light sources is a key technological goal.
Purpose of the Study:
- To prepare highly uniform GaAs/GaAsP coaxial nanowires.
- To investigate the potential for NIR lasing in these nanowire heterostructures.
- To demonstrate stimulated emission using the natural facets of nanowires.
Main Methods:
- Selective-area metal organic vapor phase epitaxy (SA-MOVPE) for nanowire growth.
- Photoluminescence spectroscopy on individual nanowires.
- Analysis of end facets for optical cavity formation.
Main Results:
- Successfully synthesized highly uniform GaAs/GaAsP coaxial nanowires.
- Observed NIR lasing from a single nanowire under pulsed light excitation.
- Confirmed that end facets act as a natural cavity, enabling resonance and stimulated emission.
Conclusions:
- The study presents a significant advancement in nanowire-based photonics.
- GaAs/GaAsP coaxial nanowires are promising candidates for integrated NIR light sources.
- This work paves the way for future developments in miniaturized optoelectronic devices.
