PlasMOStor: a metal-oxide-Si field effect plasmonic modulator.

Area of Science:

• Photonics
• Nanotechnology
• Materials Science

Background:

• Chip-based optical and optoelectronic computing require ultracompact, silicon-compatible modulators.
• Existing modulators often lack the size, material, and functional compatibility with electronic complementary metal-oxide-semiconductor (CMOS) components.

Purpose of the Study:

• To demonstrate a novel modulator based on field-effect modulation of plasmon waveguide modes.
• To achieve electro-optic modulation in a Metal-Oxide-Semiconductor (MOS) geometry compatible with silicon fabrication.

Main Methods:

• Utilized a MOS structure where a gate voltage controls near-infrared transmission.
• Employed field-effect modulation of plasmon waveguide modes.
• Integrated the gate oxide as an optical channel for modulation.

Main Results:

• Demonstrated electro-optic modulation in device volumes as small as half a cubic wavelength.
• Achieved switching energies in the femtojoule range.
• Showcased potential for gigahertz modulation frequencies.

Conclusions:

• The demonstrated modulator is ultracompact and silicon-compatible, meeting key requirements for optical computational networks.
• The device offers high performance in terms of energy efficiency and potential speed.
• This technology paves the way for advanced integrated photonic and optoelectronic systems.