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Accurate microfour-point probe sheet resistance measurements on small samples
Sune Thorsteinsson1, Fei Wang, Dirch H Petersen
1Capres A/S, Scion-DTU, Building 373, DK-2800, Kgs. Lyngby, Denmark.
The Review of Scientific Instruments
|June 3, 2009
Summary
Accurate sheet resistance measurements on small samples are possible without correction factors using microfour-point probes. Dual configuration measurements in a "sweet spot" enable precise results even for tiny samples.
Area of Science:
- Materials Science
- Electrical Engineering
- Metrology
Background:
- Accurate sheet resistance measurement is crucial for characterizing thin films and conductive materials.
- Traditional methods often require complex correction factors, especially for small sample sizes.
- Microfour-point probes offer high spatial resolution but face challenges with sample edge effects.
Purpose of the Study:
- To demonstrate accurate sheet resistance measurements on small samples without correction factors.
- To identify optimal conditions for correction-free measurements using microfour-point probes.
- To theoretically and experimentally validate a method for precise sheet resistance extraction.
Main Methods:
- Utilizing microfour-point probes in a dual measurement configuration.
- Performing measurements near a mirror plane on small samples.
- Theoretically calculating the dimensions of the "sweet spot" for accurate measurements.
- Characterizing a 40-50 micrometer square sample using a 10 micrometer pitch probe.
Main Results:
- Accurate sheet resistance extraction is achievable without correction factors under specific conditions.
- A "sweet spot" region was theoretically defined, enabling high-accuracy measurements.
- Measurements on a 40 microm square sample yielded 0.3% accuracy, and on a 50 microm square sample, 0.1% accuracy.
- The method is effective even for samples with dimensions only a few times the probe pitch.
Conclusions:
- Microfour-point probe measurements can provide highly accurate sheet resistance data on small samples without complex corrections.
- The dual configuration and proximity to a mirror plane are key to achieving this accuracy.
- This technique simplifies the characterization of small-scale electronic materials and devices.

