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Carrier-induced refractive-index-change in quantum-well lasers.
1Hughes Aircraft Company, 1600 Randolph Court, S.E., Albuquerque, New Mexico 87106, USA.
Optics Letters
|September 12, 2009
Summary
Quantum-well lasers offer higher gain and lower refractive-index change compared to conventional diode lasers. Both laser types exhibit similar saturation behavior, with refractive index showing minimal dependence on laser intensity.
Area of Science:
- Optics and Photonics
- Semiconductor Physics
Background:
- Understanding semiconductor laser performance is crucial for optical communications and data storage.
- Quantum-well (QW) lasers represent an advancement over conventional diode lasers.
Purpose of the Study:
- To investigate and compare the loaded gain and carrier-induced refractive-index change in quantum-well lasers versus conventional diode lasers.
- To analyze the saturation characteristics of these optical parameters in both laser types.
Main Methods:
- Experimental investigation of loaded gain.
- Measurement of carrier-induced refractive-index change.
- Comparative analysis between quantum-well and conventional diode semiconductor lasers.
Main Results:
- Quantum-well lasers demonstrate a higher loaded gain compared to conventional diode lasers.
- Quantum-well lasers exhibit a smaller carrier-induced refractive-index change.
- Both quantum-well and conventional diode lasers show similar saturation trends for gain and refractive-index change.
- Refractive index is found to be a significantly weaker function of laser intensity.
Conclusions:
- Quantum-well lasers offer superior gain performance.
- The reduced refractive-index change in QW lasers is advantageous for specific laser applications.
- Saturation mechanisms are comparable, but QW lasers provide a more stable refractive index with varying intensity.
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