Diode-pumped passively Q-switched picosecond microchip lasers.

Area of Science:

• Lasers and Photonics
• Materials Science

Background:

• Microchip lasers offer compact and efficient laser solutions.
• Passively Q-switched lasers utilize saturable absorbers for pulse generation.

Purpose of the Study:

• To construct and characterize passively Q-switched microchip lasers.
• To investigate the performance of Nd(3+):YAG and Cr(4+):YAG materials in microchip laser designs.

Main Methods:

• Fabrication of microchip lasers by bonding Nd(3+):YAG and Cr(4+):YAG.
• Pumping the lasers with a fiber-coupled diode laser.
• Characterization of pulse energy, duration, repetition rate, and mode quality.

Main Results:

• Achieved 11-microJ pulse energy with 337-ps duration.
• Operated at a 6 kHz pulse repetition rate in a single-frequency TEM(00) mode.
• Exceeded 180 MW/cm(2) peak power.

Conclusions:

• Demonstrated the effectiveness of Nd(3+):YAG and Cr(4+):YAG in high-performance microchip lasers.
• Highlighted the potential for high peak power generation in compact laser systems.