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The porous CuO electrode fabricated by hydrogen bubble evolution and its application to highly sensitive
Serhiy Cherevko1, Chan-Hwa Chung
1Advanced Materials and Process Research Center for IT, School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
Abstract:
The porous Cu film was deposited on a Pt/Ti/Si substrate by electrochemical deposition accompanied by hydrogen evolution at very high current densities. CuO films with similar morphologies were obtained by subsequent annealing of the porous copper films. The morphology, composition and structure of the porous Cu and porous CuO were investigated by FE-SEM, EDS and XRD methods. The complete transformation of Cu to CuO after annealing was indicated. The sensing performances of the porous CuO film were evaluated in alkaline solution with the porous CuO film showing a wide linearity range from 1microM to 2.5mM with sensitivity of 2.9mAcm(-2)mM(-1), and detection limit of 0.14microM. The sensor showed good selectivity to conventional intermediates such as AA and UA and long term stability.
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