Single ion implantation for single donor devices using Geiger mode detectors

Area of Science:

• Quantum Electronics
• Materials Science
• Nanotechnology

Background:

• Single-atom electronic devices leverage quantum properties of donors and defects.
• Ion implantation is standard for atom placement but lacks single-ion precision.
• Detecting single ion arrivals is crucial for precise device fabrication.

Purpose of the Study:

• To develop a reliable method for detecting single ion arrivals for single-atom device fabrication.
• To improve detector sensitivity and integration flexibility for ion implantation.
• To enhance the confidence in single ion counting for advanced electronic devices.

Main Methods:

• Utilized a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector.
• Achieved high detection efficiency (>75 microm distance) with sensitivity to ~600 electron-hole pairs.
• Implemented cryogenic operation of the SIGMA detector to reduce false counts.

Main Results:

• Demonstrated 100% single ion detection efficiency at >75 microm distance.
• Achieved end-of-range straggle <2.5 nm with a 5 nm gate oxide and low-energy Sb implantation.
• Reduced false count probability from 10(-1) to 10(-4) at 77 K compared to 300 K.
• Calculated >98% confidence in counting single ions with a false count probability of 10(-4).

Conclusions:

• Remote SIGMA detectors offer high efficiency and sensitivity for single ion detection.
• Cryogenic operation significantly reduces false counts, increasing detection confidence.
• This method enables precise single ion implantation for advanced quantum electronic devices.