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Updated: Jun 16, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Study of the interface between rhodium and carbon nanotubes
Irene Suarez-Martinez1, Christopher P Ewels, Xiaoxing Ke
1IMN, Universite de Nantes, CNRS, 2 Rue de la Houssiniere, BP32229, 44322 Nantes, France.
Abstract:
X-ray photoelectron spectroscopy at 3.5 keV photon energy, in combination with high-resolution transmission electron microscopy, is used to follow the formation of the interface between rhodium and carbon nanotubes. Rh nucleates at defect sites, whether initially present or induced by oxygen-plasma treatment. More uniform Rh cluster dispersion is observed on plasma-treated CNTs. Experimental results are compared to DFT calculations of small Rh clusters on pristine and defective graphene. While Rh interacts as strongly with the carbon as Ti, it is less sensitive to the presence of oxygen, suggesting it as a good candidate for nanotube contacts.

