A low-temperature-grown TiO2-based device for the flexible stacked RRAM application.

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Flexible electronics require durable memory devices compatible with various substrates.
• Titanium dioxide (TiO2) is a promising material for resistive switching memory applications.
• Low-temperature fabrication methods are crucial for processing on plastic substrates.

Purpose of the Study:

• To fabricate flexible titanium dioxide (TiO2) crossbar memory device arrays on plastic substrates.
• To investigate the performance and mechanical robustness of these flexible memory devices.
• To explore the feasibility of multi-stacked flexible memory arrays.

Main Methods:

• Amorphous titanium oxide thin films were grown using low-temperature plasma-enhanced atomic layer deposition.
• Al/TiO2/Al memory cells were fabricated on polyethersulfone (PES) plastic substrates.
• Multi-stacked memory arrays were constructed by layering additional Al/TiO2/Al structures.

Main Results:

• Flexible TiO2 memory cells on PES exhibited enhanced endurance (up to 10^4 cycles) and low switching voltages compared to rigid substrate devices.
• Multi-stacked memory arrays demonstrated stable switching characteristics across layers.
• The fabricated devices showed mechanical robustness and no interlayer cell-to-cell interference.

Conclusions:

• Flexible TiO2 memory devices fabricated via low-temperature ALD offer superior endurance and low operating voltages on plastic substrates.
• Multi-stacked flexible memory arrays can be successfully constructed, maintaining performance and robustness.
• These findings highlight the potential for developing advanced, durable flexible memory solutions.