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Updated: Jun 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum
Abstract:
In the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling, the binding energy E(b) and spin-orbit split energy Г of the ground state of a hydrogenic donor impurity in AlGaN/GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing, (1) the effective width of quantum well W̅ decreases and (2) the binding energy increases monotonously, and in the mean time, (3) the spin-orbit split energy Г decreases drastically. (4) The maximum of Г is 1.22 meV when the electric field of heterointerface is 1 MV/cm.
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