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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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An anisotropic etching effect in the graphene basal plane

Rong Yang1, Lianchang Zhang, Yi Wang

  • 1Nanoscale Physics and Device Lab, Institute of Physics, Chinese Academy of Science, Beijing 100190, PR China.

Advanced Materials (Deerfield Beach, Fla.)
|August 5, 2010
PubMed
Summary

No abstract available in PubMed .

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