Asymmetric bimodal accelerator cavity for raising rf breakdown thresholds

S V Kuzikov1, S Yu Kazakov, Y Jiang

  • 1Omega-P, Inc., 258 Bradley Street, New Haven, Connecticut 06510, USA.

Physical Review Letters
|September 28, 2010
PubMed
Summary

Researchers designed a novel microwave cavity for accelerators. This cavity enhances the accelerating gradient by 47% compared to standard designs, potentially improving particle acceleration efficiency without increasing breakdown risk.

Related Concept Videos

Mass Analyzers: Common Types01:19

Mass Analyzers: Common Types

The quadrupole mass analyzer consists of four cylindrical metal rods arranged in a diamond carrying a DC voltage and a radio-frequency AC voltage. The motion of ions through the quadrupole depends on the field strength, causing only ions of a certain m/z to resonate successfully and strike the detector at a given field strength. Though the transmission rate for these analyzers is high, the exact elemental composition of the sample is not determined because of low resolution; however, they are...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Double Resonance Techniques: Overview01:12

Double Resonance Techniques: Overview

Double resonance techniques in Nuclear Magnetic Resonance (NMR) spectroscopy involve the simultaneous application of two different frequencies or radiofrequency pulses to manipulate and observe two distinct nuclear spins. One important application of double resonance is spin decoupling, which selectively suppresses coupling with one type of nucleus while observing the NMR signal from another nucleus, simplifying the spectrum and enhancing resolution.
Spin decoupling is usually achieved by...