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Imaging stacking order in few-layer graphene.

Chun Hung Lui¹, Zhiqiang Li, Zheyuan Chen

¹Department of Physics, Columbia University, 538 West 120th Street, New York, New York 10027, United States.

|December 3, 2010

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Few-layer graphene (FLG) stacking order significantly impacts electronic properties. Raman spectroscopy reveals widespread rhombohedral stacking in FLG, stable at high temperatures.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Few-layer graphene (FLG) exhibits diverse crystallographic stacking sequences.
Stacking order critically influences FLG's electronic properties.
Accurate characterization of stacking is essential for understanding FLG behavior.

Purpose of the Study:

To develop and demonstrate an efficient Raman spectroscopy method for characterizing FLG stacking order.
To investigate the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetralayer graphene.
To assess the stability of different stacking configurations.

Main Methods:

Utilizing the distinctive features of the Raman 2D-mode for stacking characterization.
Employing Raman imaging to visualize stacking distribution.

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Analyzing tri- and tetralayer graphene samples.

Main Results:

Identified a novel and efficient method for FLG stacking order characterization using Raman spectroscopy.
Discovered that 15% of exfoliated tri- and tetralayer graphene samples contain micrometer-sized domains of rhombohedral (ABC) stacking.
Observed that these rhombohedral domains are stable at temperatures exceeding 800 °C.

Conclusions:

Raman spectroscopy is a powerful tool for mapping stacking order in few-layer graphene.
Rhombohedral stacking is more prevalent in exfoliated tri- and tetralayer graphene than previously assumed.
The thermal stability of rhombohedral stacking domains has significant implications for graphene applications.