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Updated: Jun 5, 2026

Fabrication and Testing of Photonic Thermometers
08:44

Fabrication and Testing of Photonic Thermometers

Published on: October 24, 2018

Silicon photonics manufacturing.

William A Zortman1, Douglas C Trotter, Michael R Watts

  • 1Applied Photonic Microsystems, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA. wzortm@sandia.gov

Optics Express
|December 18, 2010
PubMed
Summary
This summary is machine-generated.

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Powering silicon photonics systems requires precise frequency spacing. This study quantifies fabrication variations in microdisk resonators, showing trimming power can be limited to 231 μW per device, impacting overall system energy efficiency.

Area of Science:

  • Silicon photonics
  • Integrated optics
  • Nanophotonics

Background:

  • Silicon photonics systems require precisely spaced resonant frequencies for operation.
  • Fabrication variations in microdisk resonators can significantly impact system power budgets.
  • Understanding and quantifying these variations is crucial for efficient system design.

Purpose of the Study:

  • To quantify process-induced resonant frequency variations in microdisk resonators.
  • To assess the power requirements for frequency spacing in silicon photonics systems.
  • To introduce a new method for extracting device variations using TE and TM modes.

Main Methods:

  • Analysis of microdisk resonator frequency variations across dies, wafers, and wafer lots.
  • Utilizing Transverse Electric (TE) and Transverse Magnetic (TM) modes for dimensional metrology.

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Last Updated: Jun 5, 2026

Fabrication and Testing of Photonic Thermometers
08:44

Fabrication and Testing of Photonic Thermometers

Published on: October 24, 2018

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

  • Calculation of resonance trimming power based on demonstrated thermal tuner technology.

    • Main Results:

    • A standard 0.35 μm Silicon on Insulator (SOI) process results in TE fundamental resonance variations of 1 THz across a wafer and 105 GHz within a die.
    • The resonance trimming power per device is estimated at 231 μW for a stable manufacturing process.
    • Fabrication-induced non-uniformities account for 17% of the total power needed for compensation.

    Conclusions:

    • Fabrication variations in microdisk resonators are quantifiable and manageable.
    • Thermal tuning efficiency is a critical factor in the power budget of silicon photonics resonator technology.
    • The developed metrology technique provides valuable insights into wafer-level uniformity.