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Updated: Jun 5, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for

M Brehm1, M Grydlik, F Hackl

  • 1Institute of Semiconductor and Solid State Physics, University of Linz, Altenbergerstrasse 69, 4040 Linz, Austria.

Nanoscale Research Letters
|December 21, 2010
PubMed

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