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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Organic multiferroic tunnel junctions with ferroelectric poly(vinylidene fluoride) barriers
Juan M López-Encarnación1, J D Burton, Evgeny Y Tsymbal
1Department of Physics, Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931.
Nano Letters
|December 24, 2010
Summary
Organic ferroelectrics like PVDF offer new control in spintronics. These materials enable multiple resistance states in magnetic tunnel junctions for advanced electronics and data storage.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Organic Electronics
Background:
- Organic materials offer advantages for spintronics, including long spin-relaxation times and cost-effectiveness.
- Current research primarily uses nonpolar organic dielectrics/semiconductors as passive components in spin devices.
Purpose of the Study:
- To explore the use of organic ferroelectrics as active barriers in magnetic tunnel junctions (MTJs).
- To investigate the control of spin polarization using ferroelectric polarization in organic barriers.
Main Methods:
- Utilized first-principles calculations based on density functional theory (DFT).
- Investigated spin-resolved conductance in model Co/PVDF/Co and Co/PVDF/Fe/Co MTJs.
Main Results:
- Demonstrated that organic ferroelectric barriers enable new functionalities in MTJs.
- Observed multiple resistance states dependent on electrode magnetization and ferroelectric polarization.
- Co/PVDF/Co and Co/PVDF/Fe/Co MTJs exhibit tunable spin polarization.
Conclusions:
- Organic ferroelectrics, specifically PVDF, can be effectively used as active barriers in MTJs.
- This approach offers a novel route for organic spintronics.
- Potential applications include low-power electronics and nonvolatile data storage devices.
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