Related Experiment Video
Updated: Jun 2, 2026

14:52
Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
Published on: September 23, 2018
Doping of graphene exfoliated on SrTiO3
Benedict Kleine Bussmann1, Oliver Ochedowski, Marika Schleberger
1Fakultät für Physik and CeNIDE, Universität Duisburg-Essen, Duisburg, Germany.
Nanotechnology
|May 18, 2011
Summary
We measured the work function of graphene layers on SrTiO(3) substrates. Single-layer graphene has a work function of 4.409 eV, indicating electron doping.
Area of Science:
- Materials Science
- Surface Science
- Condensed Matter Physics
Background:
- Graphene's unique electronic properties make it a promising material for advanced applications.
- Understanding the work function of graphene on different substrates is crucial for device engineering.
Purpose of the Study:
- To determine the work function of single-layer and bilayer graphene exfoliated on crystalline strontium titanate (SrTiO3) substrates.
- To investigate the influence of substrate interactions on graphene's electronic properties.
Main Methods:
- Atomic Force Microscopy (AFM) and Scanning Kelvin Probe (SKP) measurements were performed under ultra-high vacuum (UHV) conditions.
- Contact Potential Difference (CPD) was systematically measured as a function of graphene layer number.
Main Results:
- The CPD monotonically increased with the number of graphene layers, reaching saturation after five layers.
- The work function of single-layer graphene (SLG) was determined to be 4.409 ± 0.039 eV, and bilayer graphene (BLG) was 4.516 ± 0.035 eV.
- The measured work functions are higher than that of free-standing graphene, indicating electron accumulation.
Conclusions:
- The work function of exfoliated graphene on SrTiO3 increases with layer number and saturates at approximately five layers.
- Single-layer graphene exhibits a work function of 4.409 eV, suggesting n-type doping due to electron accumulation.
- These findings provide critical data for utilizing graphene-based heterostructures in electronic devices.

