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Conductive-probe atomic force microscopy characterization of silicon nanowire
José Alvarez1, Irène Ngo, Marie-Estelle Gueunier-Farret
1Laboratoire de Génie Electrique de Paris, CNRS UMR 8507, SUPELEC, Univ P-Sud, UPMC Univ Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. jose.alvarez@supelec.fr.
Nanoscale Research Letters
|June 30, 2011
Summary
This study explored electrical properties of silicon nanowires (SiNWs) using conductive-probe atomic force microscopy (AFM). Findings reveal distinct conduction behaviors in horizontal and vertical SiNWs, influenced by microstructure and doping.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Silicon nanowires (SiNWs) are crucial for nanoscale electronic devices.
- Understanding their electrical properties is essential for device optimization.
- Previous research has explored SiNWs, but detailed conduction mechanisms require further investigation.
Purpose of the Study:
- To investigate the electrical conduction properties of both lateral and vertical silicon nanowires.
- To analyze the influence of microstructure and doping on SiNW conductivity.
- To establish transport regimes and estimate resistivity.
Main Methods:
- Utilized conductive-probe atomic force microscopy (AFM) for local current mapping and current-voltage measurements.
- Synthesized horizontal SiNWs via the in-plane solid-liquid-solid technique.
- Grew vertical phosphorus-doped SiNWs using chemical vapor deposition (CVD) with a vapor-liquid-solid process.
Main Results:
- Horizontal SiNWs exhibit internal microstructures and power law conduction behavior.
- Space-charge limited conduction, assisted by traps, dominates in horizontal SiNWs at higher biases (> 1 V).
- Phosphorus doping in vertical SiNWs affects contact resistance, enabling resistivity estimation.
Conclusions:
- Electrical conduction in SiNWs is complex, influenced by morphology and doping.
- AFM is effective for characterizing nanoscale electrical properties.
- The findings provide insights for designing SiNW-based electronic components.
