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Published on: October 5, 2013
Raman scattering study of multiferroic Ho(3)Fe(5)O(12) thin films.
H Fukumura1, N Tonari, N Hasuike
1Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan.
Summary
Thin films of Holmium iron garnet (Ho(3)Fe(5)O(12)) exhibit ferroelectricity due to substrate-induced lattice strain. This strain, confirmed by X-ray diffraction and Raman scattering, persists up to 650 K, suggesting potential multiferroic applications.
Area of Science:
- Materials Science
- Solid State Physics
- Crystallography
Background:
- Holmium iron garnet (Ho(3)Fe(5)O(12)) typically exhibits a centrosymmetric crystal structure, precluding ferroelectricity.
- Heteroepitaxial growth and substrate-induced lattice strain offer a pathway to engineer ferroelectric properties in such materials.
Purpose of the Study:
- To investigate the ferroelectric potential of Ho(3)Fe(5)O(12) thin films grown via heteroepitaxy.
- To characterize the lattice strains and their temperature dependence in these films.
Main Methods:
- Heteroepitaxial growth of Ho(3)Fe(5)O(12) films with varying thicknesses (50-160 nm).
- X-ray diffraction and Raman scattering for structural and strain analysis.
- Temperature-dependent Raman spectroscopy (300-800 K).
Main Results:
- Raman spectra revealed phonon frequency shifts in films compared to bulk samples, indicating lattice distortion.
- Distinct lattice distortion patterns were observed between thinner and thicker films.
- Lattice strain was detected up to approximately 650 K, correlating with X-ray diffraction data.
Conclusions:
- Ho(3)Fe(5)O(12) thin films exhibit substrate-induced lattice strain and potential ferroelectricity up to ~650 K.
- The proximity of the magnetic ordering temperature (T(N) = 567 K) and the inferred Curie temperature (T(C) ~650 K) suggests potential for room-temperature multiferroic behavior with enhanced magnetoelectric effects.
