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Updated: May 31, 2026

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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Quasiparticle band structure of vanadium dioxide.
R Sakuma1, T Miyake, F Aryasetiawan
1Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan. Japan Science and Technology Agency, CREST, Japan.
Summary
Vanadium dioxide is insulating experimentally, but calculations show a gapless band structure. Advanced GW calculations reveal that including self-energy and dynamical effects opens a direct gap, explaining the insulating behavior.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Computational Quantum Chemistry
Background:
- Vanadium dioxide (VO2) exhibits a metal-insulator transition near room temperature.
- Experimental observations show VO2 is insulating below 340 K.
- Standard electronic structure calculations, like Local Density Approximation (LDA), predict a gapless state for VO2.
Purpose of the Study:
- To resolve the discrepancy between experimental and calculated electronic properties of VO2.
- To investigate the role of many-body self-energy effects in VO2.
- To accurately determine the quasiparticle band structure of VO2.
Main Methods:
- Ab initio GW (Green's function) method was employed.
- Calculations focused on self-energy effects and dynamical correlations.
- Kohn-Sham basis set was utilized, considering off-diagonal matrix elements.
Main Results:
- The self-energy in VO2 is strongly energy-dependent.
- Dynamical effects are crucial for accurate quasiparticle energy calculations.
- Including off-diagonal matrix elements in the Kohn-Sham basis is important for band disentanglement.
- The combined effects open a direct band gap in VO2, consistent with experimental findings.
Conclusions:
- The insulating nature of VO2 below 340 K is explained by including many-body self-energy and dynamical effects.
- Simple LDA calculations are insufficient to capture the insulating behavior.
- Self-consistent GW calculations are essential for accurate predictions of VO2 electronic properties.
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