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Updated: May 30, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Nonvolatile write-once-read-many times memory devices based on the composites of poly(4-vinylphenol)/Vulcan XC-72
Sunghoon Song1, Tae-Wook Kim, Byungjin Cho
1Department of Nanobio Materials and Electronics, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea.
Abstract:
We fabricated write-once-read-many times (WORM) type organic memory devices in 8 x 8 cross-bar structure. The active material for organic based WORM memory devices is mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memory devices, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (I(ON)/I(OFF) - 10(6)). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.
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