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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Infrared suppression by hybrid EUV multilayer--IR etalon structures
V V Medvedev1, A E Yakshin, R W E van de Kruijs
1FOM Institute for Plasma Physics, Nieuwegein, The Netherlands. medvedev@rijnhuizen.nl
Optics Letters
|September 3, 2011
Summary
A new multilayer mirror effectively reflects extreme ultraviolet (EUV) radiation while nearly eliminating infrared (IR) light. This innovation enhances monochromatic imaging, including EUV photolithography, by suppressing unwanted spectral components.
Area of Science:
- Materials Science
- Optics
- Nanotechnology
Background:
- Conventional multilayer mirrors struggle to suppress unwanted spectral components in monochromatic imaging applications.
- Extreme ultraviolet (EUV) radiation (13.5 nm) requires specialized optics for applications like EUV photolithography.
- Infrared (IR) radiation (10.6 μm) can interfere with sensitive EUV imaging systems.
Purpose of the Study:
- To develop a novel multilayer mirror with high reflectance for EUV radiation.
- To achieve near-zero reflectance for IR radiation using the same mirror.
- To integrate this dual-functionality mirror into resonant quarter-wave structures for enhanced spectral filtering.
Main Methods:
- Fabrication of a multilayer mirror using alternating Boron Carbide (B4C) and Silicon (Si) layers via magnetron sputtering deposition.
- Characterization of mirror performance for both EUV (13.5 nm) and IR (10.6 μm) wavelengths.
- Integration of the multilayer coating into a resonant quarter-wave structure for IR suppression.
Main Results:
- The developed multilayer mirror exhibits a peak reflectance of 45% for EUV radiation at 13.5 nm with a Full Width at Half Maximum (FWHM) bandwidth of 0.284 nm.
- Demonstrated suppression of IR radiation by up to 3 orders of magnitude due to material transparency and resonant structure.
- Successful integration of the EUV multilayer within a resonant quarter-wave structure for IR filtering.
Conclusions:
- The developed B4C/Si multilayer mirror offers a viable solution for suppressing unwanted IR radiation in EUV applications.
- This technology can replace conventional multilayer mirrors, improving spectral purity in monochromatic imaging systems.
- The mirror's dual functionality makes it suitable for advanced applications such as EUV photolithography.
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