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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Piezoresistance behaviors of p-type 6H-SiC nanowires
Fengmei Gao1, Jinju Zheng, Mingfang Wang
1Institute of Materials, Ningbo University of Technology, Ningbo City, 315016, PR China.
Chemical Communications (Cambridge, England)
|October 1, 2011
Abstract:
We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors.
