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Updated: May 25, 2026

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Three-dimensional scanning force/tunneling spectroscopy at room temperature
Yoshiaki Sugimoto1, Keiichi Ueda, Masayuki Abe
1Graduate School of Engineering, Osaka University, Suita, Osaka, Japan. ysugimoto@afm.eei.eng.osaka-u.ac.jp
Summary
This study demonstrates a new technique for simultaneously measuring 3D force and tunneling current on silicon surfaces. This method also enables local density of states imaging, advancing surface science investigations.
Area of Science:
- Surface Science
- Scanning Probe Microscopy
- Nanotechnology
Background:
- Simultaneous measurement of force and tunneling current is crucial for understanding surface interactions at the nanoscale.
- Previous techniques often lack the ability to map local electronic properties alongside mechanical forces.
- The Si(111)-(7 × 7) surface is a well-established model system for surface science studies.
Purpose of the Study:
- To develop and demonstrate a novel measurement technique for simultaneous 3D force and tunneling current mapping.
- To integrate local density of states (LDOS) imaging with force and current measurements using the same scanning probe microscopy (SPM) tip.
- To investigate the atomic composition of the SPM tip during imaging of the Si(111)-(7 × 7) surface.
Main Methods:
- Utilized a scanning force/tunneling microscope (SFM/STM) setup operating at room temperature.
- Converted measured observables (frequency shift, time-averaged tunneling current) into physical quantities (interaction force, instantaneous tunneling current).
- Performed LDOS mapping by measuring tunneling current as a function of bias voltage at constant height for each lateral position.
Main Results:
- Successfully demonstrated simultaneous 3D force and tunneling current measurements on the Si(111)-(7 × 7) surface.
- Acquired LDOS images that revealed the tip apex composition, indicating coverage with silicon atoms.
- Established consistency between LDOS imaging results and the proposed Si-Si covalent bonding mechanism for atomic force microscopy (AFM) imaging.
Conclusions:
- A versatile measurement technique for 3D force/current mapping and LDOS imaging on equivalent surface areas using a single tip has been established.
- The findings provide insights into tip-surface interactions and the mechanisms governing AFM imaging.
- This integrated approach offers a powerful tool for advanced nanoscale surface characterization.

