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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Voltage Doubler Circuit01:23

Voltage Doubler Circuit

A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.

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Updated: May 25, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Power voltage current convertor using quasi complementary MOSFET current mirrors.

R A Maclachlan1, C N Riviere

  • 1Robotics Institute, Carnegie Mellon University, Pittsburgh, PA 15213 USA.

Electronics Letters
|February 8, 2012
PubMed
Summary
This summary is machine-generated.

This study presents a novel quasi complementary class AB voltage current convertor. The design achieves high voltage, high power, and wide bandwidth using discrete power MOSFETs without transistor matching.

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Last Updated: May 25, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Area of Science:

  • Electrical Engineering
  • Electronics
  • Semiconductor Devices

Background:

  • Conventional voltage current converters often face limitations in voltage compliance, power output, and bandwidth.
  • Implementing high-voltage circuits typically requires specialized components and complex designs.

Purpose of the Study:

  • To introduce a quasi complementary class AB voltage current convertor architecture.
  • To demonstrate the feasibility of high-voltage, high-power, and wide-bandwidth operation using discrete power MOSFETs.
  • To achieve high output impedance and low distortion without component trimming or matching.

Main Methods:

  • Utilizing a quasi complementary class AB architecture.
  • Employing high-voltage mirror designs for extended compliance range.
  • Implementing discrete power MOSFETs for circuit construction.

Main Results:

  • Achieved kilovolt compliance range.
  • Demonstrated tens of watts of output power.
  • Obtained greater than 100 kHz bandwidth.
  • Reached GΩ output impedance and distortion below 1%.

Conclusions:

  • The proposed architecture is highly suitable for discrete power MOSFET implementation.
  • The design enables robust high-voltage, high-power, and wide-bandwidth voltage current conversion.
  • The circuit offers excellent performance metrics without the need for trimming or transistor matching.