Three-terminal graphene negative differential resistance devices.

Yanqing Wu1, Damon B Farmer, Wenjuan Zhu

  • 1IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.

ACS Nano
|February 14, 2012
PubMed
Summary

A novel negative differential resistance (NDR) mechanism in graphene field-effect transistors is discovered. This unique electron-hole competition in graphene opens new possibilities for high-frequency electronic devices.

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