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Program and read scaling trade-offs in phase change memories
Stefania Braga1, Alessandro Cabrini, Guido Torelli
1Department of Electronics, University of Pavia, via Ferrata 1, 27100 Pavia, Italy.
Journal of Nanoscience and Nanotechnology
|March 14, 2012
Summary
This study explores scaling in Phase Change Memory (PCM) by examining how smaller dimensions and lower read voltage impact performance. Analytical models predict how RESET and read currents depend on cell geometry, crucial for future PCM designs.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Engineering
Background:
- Phase Change Memory (PCM) is a promising non-volatile memory technology.
- Scaling is critical for improving PCM density and performance.
- Understanding the impact of geometrical and electrical scaling is essential for next-generation memory devices.
Purpose of the Study:
- To investigate the scaling perspectives of Phase Change Memory (PCM) technology.
- To analyze the effects of geometrical dimensions reduction and read voltage scaling on program and read operations.
- To provide analytical expressions for estimating current dependence on cell parameters.
Main Methods:
- Derivation of analytical expressions.
- Analysis of geometrical dimensions (heater size, chalcogenide layer thickness).
- Evaluation of read voltage scaling effects.
Main Results:
- Established quantitative relationships between geometrical parameters and PCM performance.
- Identified key factors influencing RESET and read current.
- Provided a framework for predicting scaling behavior.
Conclusions:
- Geometrical dimensions and read voltage significantly influence PCM scaling.
- Analytical models offer valuable insights for optimizing PCM cell design.
- This research contributes to the advancement of scalable PCM technology.
