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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
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Dirac semimetal in three dimensions.

S M Young1, S Zaheer, J C Y Teo

  • 1The Makineni Theoretical Laboratories, Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6323, USA.

Physical Review Letters
|May 1, 2012
PubMed
Summary
This summary is machine-generated.

Researchers have extended graphene's pseudorelativistic physics to three-dimensional (3D) materials, discovering 3D Dirac points in specific crystal structures. This finding opens possibilities for new 3D materials analogous to graphene.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Solid-state physics

Background:

  • Graphene exhibits unique pseudorelativistic physics due to Dirac cones near the Fermi level.
  • Topological and normal insulators are characterized by phase transitions related to inversion symmetry.
  • Extending 2D Dirac physics to 3D materials is a significant challenge in condensed matter physics.

Purpose of the Study:

  • To investigate the possibility of realizing 3D Dirac points in materials beyond graphene.
  • To identify specific crystallographic criteria for hosting symmetry-protected 3D Dirac points.
  • To explore potential 3D analogs to graphene with similar electronic properties.

Main Methods:

  • Theoretical analysis of symmetry properties in crystalline materials.
  • Development of criteria for identifying space groups admitting 3D Dirac points.
  • Ab initio calculations using density functional theory (DFT).

Main Results:

  • Demonstrated that specific space groups, beyond those in topological insulators, can host 3D Dirac points.
  • Provided criteria for identifying such symmetry-protected degeneracies.
  • Identified beta-cristobalite Bismuth Oxyde (BiO2) as a material exhibiting three 3D Dirac points at the Fermi level.
  • Calculations indicate that beta-cristobalite BiO2 is metastable, suggesting experimental feasibility.

Conclusions:

  • The pseudorelativistic physics of graphene can be generalized to three-dimensional materials.
  • Symmetry-protected 3D Dirac points can exist in specific crystallographic structures.
  • Beta-cristobalite BiO2 serves as a promising candidate for a 3D analog of graphene, potentially realizable experimentally.