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Updated: May 22, 2026
Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using
Jiang-Yong Zhang1, Wen-Jie Liu, Ming Chen
1Laboratory of Micro/Nano Optoelectronics, Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, Fujian, People's Republic of China. bzhang@xmu.edu.cn.
Abstract:
GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal dissipation, which should be mainly attributed to the removal of sapphire and the good thermal conductivity of silicon substrate. Benefited from the optimized wafer bonding process, the transfer processes had a negligible influence on electrical characteristics of the transferred LEDs. Thus, the transferred LEDs showed a similar current-voltage characteristic with the conventional LEDs, which is of crucial importance for practical applications. It is believed that the double-transfer technique offers an alternative way to fabricate high performance GaN-based thin-film LEDs.
