Dynamical thermal effects in InGaAsP microtubes at telecom wavelengths.

Area of Science:

• Semiconductor physics
• Nanophotonics
• Optical materials

Background:

• Microtubes fabricated from strained semiconductor bilayers offer unique optical properties.
• Quantum dots embedded in nanostructures can modify light-matter interactions.

Purpose of the Study:

• To investigate the dynamical thermal effect in InGaAsP microtubes at telecom wavelengths.
• To understand the influence of InAs quantum dots on thermal behavior.
• To explore potential applications based on the observed thermal effects.

Main Methods:

• Fabrication of InGaAsP microtubes using a strained semiconductor bilayer release process.
• Coupling microtubes with abruptly and adiabatically tapered optical fibers.
• Characterization of thermal effects at different telecom wavelengths (1525 nm, 1578 nm, 1634 nm).
• Visualization of photon absorption-induced thermal effects via microbottle generation.

Main Results:

• Observation of a dynamical thermal effect in InGaAsP microtubes at 1525 nm and 1578 nm.
• Demonstration of passive behavior at longer wavelengths around 1634 nm.
• Correlation of the thermal effect with photon absorption by embedded InAs quantum dots.
• Visualization of the thermal effect through microbottle formation.

Conclusions:

• InGaAsP microtubes exhibit wavelength-dependent dynamical thermal effects.
• Photon absorption by InAs quantum dots is the primary cause of the observed thermal phenomena.
• The dynamical thermal effect can be managed for passive or active optical device applications by selecting appropriate resonance wavelengths.