Related Experiment Video
Updated: May 21, 2026
12:21
Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence
Published on: March 6, 2020
A non-selenization technology by co-sputtering deposition for solar cell applications
Bao-Tang Jheng1, Po-Tsun Liu, Meng-Chyi Wu
1Department of Electrical Engineering, National Tsing Hua University, Hsinchu City, Taiwan.
Optics Letters
|June 30, 2012
Summary
This study introduces a new method for creating copper indium gallium selenide (CIGS) thin films using co-sputtering, eliminating the need for a separate selenization step. The resulting films exhibit desirable structural and electrical properties for semiconductor applications.
Area of Science:
- Materials Science
- Thin Film Technology
- Semiconductor Physics
Background:
- Copper indium gallium selenide (Cu(In(1-x)Ga(x))Se2 or CIGS) is a crucial material for thin-film solar cells.
- Traditional CIGS film fabrication often involves complex, multi-step processes including selenization.
Purpose of the Study:
- To develop a novel, simplified method for producing polycrystalline CIGS thin films.
- To comprehensively characterize the structural, morphological, and electrical properties of the fabricated CIGS films.
Main Methods:
- Co-sputtering of indium-selenium (In-Se) and copper-gallium (Cu-Ga) alloy targets.
- Material analysis using surface morphology, X-ray diffraction (XRD), Raman spectroscopy, and Hall effect measurements.
Main Results:
- Successfully formed dense polycrystalline CIGS thin films without an additional selenization process.
- XRD confirmed the presence of chalcopyrite phase peaks, and Raman spectroscopy verified the CIGS phase while excluding secondary phases like Cu(2-x)Se.
- Hall effect measurements indicated a p-type semiconductor with a resistivity of 2.19×10^2 Ω cm and mobility of 88 cm^2/V s.
Conclusions:
- The co-sputtering method offers an efficient route to high-quality CIGS thin films.
- The fabricated CIGS films possess properties suitable for photovoltaic and other semiconductor device applications.
