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Switching mechanisms in flexible solution-processed TiO₂ memristors
J L Tedesco1, L Stephey, M Hernández-Mora
1Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA. joseph.tedesco@nist.gov
Nanotechnology
|July 12, 2012
Summary
This study investigates the switching mechanism of titanium dioxide memristors. Results indicate a localized, charge-based phenomenon dependent on device area, advancing understanding of these novel electronic components.
Area of Science:
- Solid-state physics
- Materials science
- Nanoelectronics
Background:
- Memristors are novel electronic devices with applications in computing and memory.
- The precise switching mechanisms of memristors remain incompletely understood.
- Solution-processed titanium dioxide memristors offer a promising platform for research.
Purpose of the Study:
- To elucidate the switching mechanism of solution-processed titanium dioxide memristors.
- To investigate the influence of device area and film thickness on memristor electrical behavior.
- To correlate observed electrical characteristics with proposed switching mechanisms.
Main Methods:
- Fabrication of titanium dioxide-based memristors using a solution-processed approach.
- Systematic variation of device area and film thickness to study electrical properties.
- Electrical characterization, including analysis before and after device bisection.
- Infrared imaging during device operation to visualize conduction paths.
Main Results:
- Electrical behavior is strongly influenced by device area and film thickness.
- Evidence suggests a localized, charge-based switching phenomenon.
- Conduction path analysis confirms the localized nature of the switching.
Conclusions:
- The switching mechanism in these memristors is dominated by a localized, charge-based effect.
- Device area is a critical parameter influencing the memristor's electrical performance.
- This research contributes to a deeper understanding of memristor operation.
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