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Updated: May 20, 2026

Fabrication of Bi2Te3 and Sb2Te3 Thermoelectric Thin Films using Radio Frequency Magnetron Sputtering Technique
Published on: May 17, 2024
Thermoelectric properties of Bi2Te3-In2Se3 composite thin films prepared by co-sputtering
Kwang-Chon Kim1, Won Chel Choi, Hyun Jae Kim
1Electronic Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea.
Abstract:
Bi2Te3-In2Se3 films were prepared by co-sputtering followed by annealing, and their structural and thermoelectric properties were investigated. The immiscible nature of the two alloys results in precipitation of the second phase, thus leading to structures with self-assembled dots that are a few nanometers in scale. HAADF-STEM and HRTEM were used to confirm that In2Se3 nanodots that were a few nanometers in size did indeed form in the Bi2Te3 thin film. It was found that the incorporation of these nanodots can reduce the thermal conductivity of the thin film.
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