Graphene and boron nitride lateral heterostructures for atomically thin circuitry

Area of Science:

• Materials Science
• Nanotechnology
• Condensed Matter Physics

Background:

• Precise spatial control of electrical properties in thin films is crucial for integrated circuitry.
• Large-scale production of graphene and hexagonal boron nitride (h-BN) exists, but controlled lateral heterostructures are challenging.
• Graphene/h-BN interfaces offer potential for bandgap and magnetic property engineering but lack scalable fabrication methods.

Purpose of the Study:

• To develop a versatile and scalable process for fabricating lateral junctions in atomically thin materials.
• To enable spatially controlled synthesis of graphene/h-BN and doped/undoped graphene lateral heterostructures.
• To advance the fabrication of atomically thin integrated circuitry.

Main Methods:

• Introduced a 'patterned regrowth' process for controlled synthesis of lateral junctions.
• Fabricated continuous, one-atom-thick sheets with distinct regions of graphene and h-BN, or doped and undoped graphene.
• Utilized conductance measurements to verify electrical properties across the heterojunctions.

Main Results:

• Successfully synthesized mechanically continuous lateral junctions between graphene and h-BN, and between doped and undoped graphene.
• Demonstrated insulating behavior in h-BN regions and excellent electrical properties (low resistance, high mobility) in graphene regions.
• Achieved spatially controlled fabrication of distinct electrical properties within a single atomically thin film.

Conclusions:

• The 'patterned regrowth' method provides a scalable route to creating lateral heterostructures in 2D materials.
• This technique enables the fabrication of electrically isolated active and passive elements within continuous, atomically thin sheets.
• The findings are a significant step towards developing complex, ultimate-limit thickness integrated devices.