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Updated: May 18, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)
B Sanduijav1, D Scopece, D Matei
1Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, A-4040 Linz, Austria.
Abstract:
SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ scanning tunneling microscopy it is shown that the 1D-3D transition proceeds smoothly from perfectly facetted 1D nanoripples to coarsened superripples, tadpoles, asymmetric domes, and barns without involving coalescence or agglomeration. By extension of the studies to a wide range of SiGe compositions, a 1D-3D growth phase diagram is obtained. Total energy calculations reveal that the observed critical transition volumes are fully consistent with thermodynamic driven strain relaxation.
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