One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

B Sanduijav1, D Scopece, D Matei

  • 1Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, A-4040 Linz, Austria.

Physical Review Letters
|October 4, 2012
PubMed

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