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Updated: May 17, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
Published on: August 8, 2025
Infrared dielectric properties of low-stress silicon nitride
Giuseppe Cataldo1, James A Beall, Hsiao-Mei Cho
1NASA Goddard Space Flight Center, 8800 Greenbelt Road, Greenbelt, Maryland 20771, USA. Giuseppe.Cataldo@nasa.gov
Abstract:
Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
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