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Updated: May 15, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Anisotropic formation and distribution of stacking faults in II-VI semiconductor nanorods
Steven M Hughes1, A Paul Alivisatos
1Department of Chemistry, University of California, Berkeley, California 94720, USA. hughess2@whitman.edu
Abstract:
Nanocrystals of cadmium selenide exhibit a form of polytypism with stable forms in both the wurtzite and zinc blende crystal structures. As a result, wurtzite nanorods of cadmium selenide tend to form stacking faults of zinc blende along the c-axis. These faults were found to preferentially form during the growth of the (001) face, which accounts for 40% of the rod's total length. Since II-VI semiconductor nanorods lack inversion symmetry along the c-axis of the particle, the two ends of the nanorod may be identified by this anisotropic distribution of faults.
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