On-chip optical interconnects made with gallium nitride nanowires

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Optoelectronics

Background:

• Gallium nitride (GaN) nanowires are promising for optoelectronic applications due to their unique properties.
• Integrating light-emitting and detecting functionalities at the nanoscale is crucial for advanced electronic systems.

Purpose of the Study:

• To fabricate and characterize a two-nanowire device utilizing GaN nanowires.
• To investigate the optical coupling capabilities of the fabricated GaN nanowire device.
• To explore the potential for on-chip optical interconnects using GaN nanowires.

Main Methods:

• Growth of axial p-n junction GaN nanowires via molecular beam epitaxy.
• Transfer of GaN nanowires to a non-native substrate.
• Selective electrical contacting to create discrete optical source/detector components.

Main Results:

• Successful fabrication of a two-nanowire device comprising GaN nanowires.
• Demonstration of both light-emitting and photoconductive capabilities within the GaN nanowires.
• Characterization of the optical coupling efficiency of the nanowire device.

Conclusions:

• The developed GaN nanowire device integrates light emission and detection functionalities.
• The demonstrated optical coupling opens possibilities for novel optoelectronic integration.
• This technology could enable new pathways for optical interconnects between on-chip electrical subsystems.