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Updated: May 14, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
What about U on surfaces? Extended Hubbard models for adatom systems from first principles.
Philipp Hansmann1, Loïg Vaugier, Hong Jiang
1Centre de Physique Théorique, Ecole Polytechnique, CNRS-UMR7644, 91128 Palaiseau, France. philipp.hansmann@cpht.polytechnique.fr
Electronic correlations in semiconductor surfaces are crucial for novel physics. This study quantifies these interactions for group IV adatoms on Si(111), revealing large Coulomb interactions and enabling new many-body calculations.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Surface Science
Background:
- Semiconductor (111) surfaces and adatom systems exhibit fascinating properties due to electronic correlations and dimensional constraints.
- Many-body theoretical studies on these systems, beyond the standard band picture, are scarce.
- First-principles calculations of inter-electronic Coulomb interactions are often missing, with these parameters typically treated as adjustable.
Purpose of the Study:
- To calculate the interaction parameters for group IV surface-adatom systems on Si(111).
- To investigate the significance of inter-electronic Coulomb interactions and intersite interactions in these systems.
- To construct an extended Hubbard model for further many-body investigations.
Main Methods:
- First-principles electronic structure calculations.
- Estimation of inter-electronic Coulomb interaction parameters.
- Development of an extended Hubbard model.
Main Results:
- Calculated large inter-electronic Coulomb interactions for Si(111):C, Si, Sn, Pb systems, significantly exceeding kinetic energies.
- Demonstrated the non-negligible contribution of intersite interactions.
- Successfully constructed an extended Hubbard model applicable to the studied series.
Conclusions:
- The calculated interaction parameters are essential for accurate theoretical descriptions of these correlated systems.
- The developed extended Hubbard model provides a foundation for advanced many-body studies.
- This work bridges a critical gap in theoretical understanding of correlated electron behavior on semiconductor surfaces.
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