Related Experiment Video
Updated: May 13, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer
Shan Zheng1, Qing-Qing Sun, Wen Yang
1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, China. qqsun@fudan.edu.cn.
Abstract:
Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al2O3 layer between metal and SiC to solve this problem simply but effectively. The Al2O3/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the electrical properties of subsequently deposited metal contacts were characterized by current-voltage method. We can clearly demonstrate that the insertion of Al2O3 interfacial layer can modulate the current density effectively and realize the transfer between the Schottky contact and ohmic contact.
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

