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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

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High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
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Highly directional thermal emission from two-dimensional silicon structures.

Troy Ribaudo1, David W Peters, A Robert Ellis

  • 1Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA. tribaud@sandia.org

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|April 3, 2013
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Summary
This summary is machine-generated.

Researchers developed near-perfect infrared absorbers using doped silicon gratings. These structures efficiently manage thermal radiation for specialized applications, showing excellent agreement between simulations and experiments.

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Area of Science:

  • Materials Science
  • Optics
  • Nanotechnology

Background:

  • Effective thermal management requires materials with tailored absorption properties.
  • Infrared absorbers are crucial for applications like thermal imaging and energy harvesting.
  • Silicon-based nanostructures offer potential for tunable optical responses.

Purpose of the Study:

  • To design, simulate, fabricate, and characterize near-perfectly absorbing two-dimensional grating structures.
  • To utilize heavily doped silicon (HdSi) supporting long wave infrared surface plasmon polaritons (LWIR SPP's).
  • To meet thermal management needs for high absorption in the thermal infrared and low absorption in visible light.

Main Methods:

  • Device design and optimization using finite difference time domain (FDTD) and rigorous coupled wave analysis (RCWA) simulations.
  • Fabrication of the designed two-dimensional grating structures.
  • Characterization using reflection spectroscopy and normal incidence emissivity measurements.

Main Results:

  • Achieved near-perfect absorption in the thermal infrared spectrum.
  • Demonstrated low absorption in the visible spectrum over a broad angular range.
  • Obtained excellent agreement between simulated and experimentally measured optical properties.

Conclusions:

  • Heavily doped silicon gratings are effective for creating high-performance infrared absorbers.
  • The developed structures satisfy stringent requirements for thermal management applications.
  • The study validates the simulation and fabrication techniques for advanced optical devices.