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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Energy Bands in Solids01:01

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Photoluminescence: Applications01:14

Photoluminescence: Applications

Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Updated: May 11, 2026

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
13:29

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Published on: August 23, 2012

GaP-ZnS solid solutions: Semiconductors for efficient visible light absorption and emission.

Judy N Hart1, Neil L Allan

  • 1School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom. judy.hart@bristol.ac.uk.

Advanced Materials (Deerfield Beach, Fla.)
|April 30, 2013
PubMed
Summary
This summary is machine-generated.

Gallium phosphide-zinc sulfide (GaP-ZnS) solid solutions offer a tunable direct band gap for visible light applications. This material system readily achieves a 2.0 eV band gap, ideal for efficient photocatalysis in water splitting.

Keywords:
Semiconductordensity functional theoryphotocatalysissolid-solution

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Area of Science:

  • Materials Science
  • Photocatalysis
  • Semiconductor Physics

Background:

  • Tuning semiconductor band gaps is crucial for optimizing light absorption and emission.
  • Visible-light-driven photocatalysis, particularly for water splitting, requires materials with specific electronic properties.

Purpose of the Study:

  • To investigate GaP-ZnS solid solutions and multilayered structures for tunable direct band gap properties.
  • To determine the accessibility of a 2.0 eV direct band gap for photocatalytic applications.

Main Methods:

  • Synthesis and characterization of GaP-ZnS solid solutions.
  • Fabrication and analysis of GaP-ZnS multilayered structures.
  • Optical and electronic property measurements to determine band gap energies.

Main Results:

  • GaP-ZnS solid solutions and multilayered structures exhibit tunable direct band gaps.
  • A direct band gap of approximately 2.0 eV was achieved within these systems.
  • This band gap energy is optimal for visible light absorption and emission.

Conclusions:

  • GaP-ZnS systems provide a versatile platform for developing materials with tailored optoelectronic properties.
  • The accessible 2.0 eV direct band gap makes these materials highly promising for photocatalysis, including water splitting.