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Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study
Alexander Dobrovolsky1, Shula Chen, Yanjin Kuang
1Department of Physics, Chemistry and Biology, Linköping University, Linköping, 581 83, Sweden. aledo@ifm.liu.se.
Nanoscale Research Letters
|May 18, 2013
Summary
Gallium phosphide/gallium phosphonitride (GaP/GaNP) core/shell nanowires show bright light emission. Temperature increases non-radiative recombination, reducing light intensity but maintaining room-temperature emission.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Gallium phosphide (GaP) and gallium phosphonitride (GaNP) core/shell nanowires (NWs) are promising semiconductor materials.
- Understanding recombination processes is crucial for optimizing their optoelectronic properties.
Purpose of the Study:
- To investigate the recombination mechanisms in GaP/GaNP core/shell nanowires grown on silicon.
- To analyze the impact of temperature on photoluminescence (PL) intensity and carrier lifetime.
Main Methods:
- Temperature-dependent continuous wave and time-resolved photoluminescence (PL) spectroscopies were employed.
- Analysis of PL emission intensity and carrier dynamics as a function of temperature.
Main Results:
- GaP/GaNP NWs exhibit bright PL due to radiative recombination in the GaNP shell.
- PL intensity decreases with increasing temperature due to thermal activation of localized excitons and non-radiative recombination (NRR).
- An activation energy of approximately 180 meV was determined for the NRR process, which also decreases carrier lifetime.
Conclusions:
- Two primary thermal quenching mechanisms limit PL efficiency in GaP/GaNP NWs.
- Despite thermal degradation, significant room-temperature PL emission is observed.
- NRR significantly impacts carrier lifetime and overall device performance.
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