Related Experiment Video
Updated: May 10, 2026
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Sub-10 nm Graphene Nanoribbon Array field-effect transistors fabricated by block copolymer lithography
Jeong Gon Son1, Myungwoo Son, Kyeong-Joo Moon
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA); Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (South Korea).
Abstract:
Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.
