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Published on: November 15, 2013
Control and understanding of kink formation in InAs-InP heterostructure nanowires
S Fahlvik Svensson1, S Jeppesen, C Thelander
1Solid State Physics and the Nanometer Structure Consortium (nmC@LU), Lund University, PO Box 118, SE-221 00 Lund, Sweden. sofia.fahlvik svensson@ftf.lth.se
Nanotechnology
|August 1, 2013
Summary
Controlling indium availability during nanowire growth suppresses kink formation in InAs-InP-InAs heterostructures. This study reveals mechanisms for kink suppression and controllable kinked nanowire production.
Area of Science:
- Semiconductor Nanostructures
- Materials Science
- Epitaxial Growth
Background:
- Nanowire heterostructures offer advanced band structure engineering possibilities.
- Challenges in nanowire growth include controlling composition, grading, and kink formation.
- Understanding kink formation mechanisms is crucial for defect-free nanowire synthesis.
Purpose of the Study:
- Investigate the influence of indium pressure, nanowire diameter, and density on heterostructure nanowire morphology.
- Elucidate the mechanisms behind kink formation in InAs-InP-InAs nanowires.
- Identify parameters to control or suppress kinking.
Main Methods:
- Chemical beam epitaxy (CBE) for growing InAs-InP-InAs heterostructure nanowires.
- Detailed morphological analysis based on varying growth parameters.
- Correlation of kink formation with specific interfacial structures.
Main Results:
- Indium availability is identified as a critical factor for kink formation.
- The length of the InP segment significantly impacts nanowire morphology.
- Kinking is linked to an inclined facet at the InP-InAs interface, causing growth direction changes.
- Suppression of the inclined facet formation prevents kinking.
Conclusions:
- Careful tuning of growth parameters, particularly indium availability and InP segment length, allows for the suppression of kinking.
- Controllably kinked nanowires can be produced with high yield.
- This research provides insights into defect control for advanced nanowire applications.
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