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Amorphization induced by focused ion beam milling in metallic and electronic materials
Yoon Huh1, Ki Jung Hong, Kwang Soo Shin
1Center for Analysis and Assessment, Research Institute of Industrial Science and Technology, Pohang 790-330, Republic of Korea. yhuh@rist.re.kr
Focused ion beam (FIB) milling causes amorphization, impacting transmission electron microscopy (TEM) image clarity. This study investigates FIB-induced amorphization in metallic, semiconductive, and ceramic materials using TEM.
Area of Science:
- Materials Science
- Nanotechnology
- Microscopy
Background:
- Focused ion beam (FIB) milling is a common technique for preparing specimens for transmission electron microscopy (TEM).
- High-energy gallium ions used in FIB milling can induce amorphization at specimen edges.
- This amorphization negatively affects the quality and clarity of TEM images.
Purpose of the Study:
- To investigate the extent and nature of amorphization induced by FIB milling.
- To analyze the impact of FIB milling on different material types.
- To understand the influence of amorphization on high-resolution TEM imaging.
Main Methods:
- Transmission electron microscopy (TEM) was used to examine specimens after FIB milling.
- Three material types were analyzed: bulk metallic materials, semiconductive materials, and electronic ceramic materials.
- The study focused on the edge regions of the milled specimens.
Main Results:
- FIB milling was confirmed to induce amorphization in all investigated materials.
- The degree of amorphization varied depending on the material type.
- Amorphization at specimen edges was observed to degrade the clearness of TEM micrographs.
Conclusions:
- FIB milling, while essential for TEM specimen preparation, introduces artifacts like amorphization.
- Understanding and mitigating FIB-induced amorphization is crucial for obtaining high-quality TEM data.
- Further research may explore alternative milling strategies or post-milling treatments to minimize amorphization.
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