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Infrared differential interference contrast microscopy for 3D interconnect overlay metrology.

Yi-sha Ku¹, Deh-Ming Shyu, Yeou-Sung Lin

¹Center for Measurement Standards, ITRI, Bldg. 12, 321 Sec. 2, Kuang Fu Rd., Hsinchu, Taiwan. yku@itri.org.tw

|August 14, 2013

Summary

Measuring wafer bonding overlay in 3D interconnects is challenging. Infrared microscopy with differential interference contrast (DIC) offers a solution, achieving better than 1.0 micron accuracy for overlay measurements.

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Correlative Microscopy for 3D Structural Analysis of Dynamic Interactions

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Area of Science:

Materials Science
Metrology
Semiconductor Manufacturing

Background:

3D interconnect metrology faces challenges with opaque silicon wafers.
Conventional optical microscopy is insufficient for through-wafer measurements.
Accurate measurement of wafer bonding overlay is critical for advanced packaging.

Purpose of the Study:

To demonstrate infrared microscopy with DIC for measuring wafer bonding overlay.
To overcome limitations of optical microscopy in 3D interconnect metrology.
To develop a reliable method for assessing overlay accuracy in bonded wafers.

Main Methods:

Utilized infrared microscopy enhanced by differential interference contrast (DIC).
Employed 2D symmetric overlay marks on front and back sides of thinned wafers.
Developed a custom analysis algorithm and theoretical fitting model for overlay error mapping.

Main Results:

Successfully measured wafer bonding overlay using the developed infrared DIC method.
Quantified overlay error between bonded wafers and interconnect structures.
Achieved a measurement accuracy better than 1.0 micron.

Conclusions:

Infrared microscopy with DIC is effective for 3D interconnect metrology.
The developed method provides high accuracy for wafer bonding overlay assessment.
This technique addresses a key challenge in semiconductor manufacturing metrology.