Related Experiment Video
Updated: May 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
15-nW Biopotential LPFs in 0.35- μm CMOS using subthreshold-source-follower Biquads with and without gain
Abstract:
Most biopotential readout front-ends rely on the g m- C lowpass filter (LPF) for forefront signal conditioning. A small g m realizes a large time constant ( τ = C / g m) suitable for ultra-low-cutoff filtering, saving both power and area. Yet, the noise and linearity can be compromised, given that each g m cell can involve one or several noisy and nonlinear V- I conversions originated from the active devices. This paper proposes the subthreshold-source-follower (SSF) Biquad as a prospective alternative. It features: 1) a very small number of active devices reducing the noise and nonlinearity footsteps; 2) No explicit feedback in differential implementation, and 3) extension of filter order by cascading. This paper presents an in-depth treatment of SSF Biquad in the nW-power regime, analyzing its power and area tradeoffs with gain, linearity and noise. A gain-compensation (GC) scheme addressing the gain-loss problem of NMOS-based SSF Biquad due to the body effect is also proposed. Two 100-Hz 4th-order Butterworth LPFs using the SSF Biquads with and without GC were fabricated in 0.35- μm CMOS. Measurement results show that the non-GC (GC) LPF can achieve a DC gain of -3.7 dB (0 dB), an input-referred noise of 36 μV rms (29 μV rms ), a HD3@60 Hz of -55.2 dB ( - 60.7 dB) and a die size of 0.11 mm² (0.08 mm²). Both LPFs draw 15 nW at 3 V. The achieved figure-of-merits (FoMs) are favorably comparable with the state-of-the-art.
More Related Videos
15:25Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
Published on: February 4, 2018
09:01Gain-compensation Methodology for a Sinusoidal Scan of a Galvanometer Mirror in Proportional-Integral-Differential Control Using Pre-emphasis Techniques
Published on: April 4, 2017
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Small-Signal Analysis of MOSFET Amplifiers
MOSFET Amplifiers
Small-Signal Analysis of BJT Amplifiers
Cascaded Op Amps
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...